Published April 30, 2004
| Version v1
Journal article
Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T
Description
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-assembled quantum dots with large inter-shell spacing (75 meV) in magnetic fields up to 73 T. The PL spectra show a complex picture of levels splitting and crossings. A simple two-band single-particle model provides a good approximation to explain the observed magneto-PL spectra
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2004.01.121;
- PII
- S0921452604001176;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 346-347
- Journal Issue
- 1-4
- Journal Page Range
- p. 432-436
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 7. international symposium on research in high magnetic fields
- Dates
- 20-23 Jul 2003
- Place
- Toulouse (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37001045
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONIC STRUCTURE; EMISSION SPECTRA; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MAGNETIC FIELDS; PHOTOLUMINESCENCE; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SPECTRA
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.