The development of emission electronics methods for diagnostics of high-temperature characteristics of transition metals

Measurements of initial sections of VAC of a plane diode with a thermocathode of tungsten monocrystals at T>ΘTE (ΘTE-characteristic thermoemission temperature) are conducted. Relations between emission parameters and the metal high-temperature characteristics including energy and thermal entropy of crystal lattice thermal point defect (s) formaion are revealed. It is shown that there exists a point defect formation thermal entropy temperature dependence and methods for determining s(T) by recombination emission current VAC measurement results are proposed