Published 1995
| Version v1
Miscellaneous
1-keV H implantation in a-Si and c-Si investigated by simulation: physical versus computational modeling
Creators
- 1. INRS-Energie et materiaux, Univ. du Quebec, CP 1020, Varennes, Quebec, J3X 1S2 (Canada)
Description
Short communication
Additional details
Publishing Information
- Imprint Title
- 16. International Conference on Atomic Collisions in Solids. Book of abstracts
- Imprint Pagination
- 168 p.
- Journal Page Range
- p. B45.
- Report number
- INIS-mf--14833
Conference
- Title
- 16. International Conference on Atomic Collisions in Solids.
- Dates
- 17-21 Jul 1995.
- Place
- Linz (Austria).
INIS
- Country of Publication
- Austria
- Country of Input or Organization
- Austria
- INIS RN
- 27064673
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AMORPHOUS STATE; C CODES; COLLISIONS; COMPUTERIZED SIMULATION; CRYSTALS; ENERGY LOSSES; HYDROGEN; IONS; M CODES; SILICON; T CODES
- Descriptors DEC
- CHARGED PARTICLES; COMPUTER CODES; ELEMENTS; NONMETALS; SEMIMETALS; SIMULATION