Published 1997 | Version v1
Journal article

Semiconductor detector for thermal neutrons

  • 1. Centro de Estudios Aplicados al Desarrollo Nuclear, Cuba (Cuba)

Description

This work describes the fabrication technology of thermal neutrons detectors based on superficial barrier Silicon detectors with 6LiF converter, such as its parameters fundamental analysis. The measurement of the energetic resolution and intensity of counting is carried out with a fountain of neutrons of Am-Be with exit of 6,6.106 neutrons/seg, of a maximum energy of 10 MeV and average energy of 4,9 MeV. The thermal neutrons were obtained through the moderation in a layer of paraffin of 4 cm of thickness. (S. Grainger)

Availability note (English)

Also available from Biblioteca Luis Demetrio Tinoco, Universidad de Costa Rica

Abstract (Spanish)

Se describe la tecnologia de fabricacion de detectores de neutrones termicos con base en detectores de Silicio de barrera superficial con convertidor de 6LiF, asi como se realiza el analisis de sus parametros fundamentales. La medicion de la resolucion energetica e intensidad de conteo se realiza con una fuente de neutrones de Am-Be con salida de 6,6.106 neutrones/seg, de una energia maxima de 10 MeV y energia promedio de 4,9 MeV. Los neutrones termicos se obtuvieron por medio de la moderacion en una capa de parafina de 4 cm de grosor. (author)

Additional details

Additional titles

Original title (Spanish)
Detector semiconductor para neutrones termicos

Publishing Information

Journal Title
Tecnologia en marcha
Journal Volume
13
Journal Issue
special issue
Journal Page Range
p. 75-78
ISSN
0379-3982

Optional Information

Notes
Refs, figs, tab