Development of applications for high-strength reaction-sintered silicon carbide
Creators
- 1. Toshiba Corp., Power and Indusrial Systems Research and Development Center, Tokyo (Japan)
Description
High-strength reaction-sintered silicon carbide (SiC), which was developed by Toshiba, has the world's highest strength exceeding 1,000 MPa. Its use has been steadily expanding in various energy and industrial applications, such as for hot parts and wear-resistant parts, due to its superior environmental resistance, high thermal resistance, high wear resistance, high stiffness, high thermal conductivity, low thermal expansion, and low density. It has also been attracting attention as an eco-friendly ceramic from the viewpoints of its low sintering temperature and near-net shape. In addition, it has been studied for application to heat exchanger parts for hydrogen production systems, and to mirror substrates for space optics, etc. This paper describes the expanding range of applications for high-strength reaction-sintered SiC. (author)
Additional details
Publishing Information
- Journal Title
- Toshiba Rebyu
- Journal Volume
- 61
- Journal Issue
- 6
- Journal Page Range
- p. 72-75
- ISSN
- 0372-0462
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37108063
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- HEAT EXCHANGERS; HEAT TRANSFER; HYDROGEN PRODUCTION; MANUFACTURING; MIRRORS; OPTICS; PUMPS; REACTION HEAT; SILICON CARBIDES; SINTERING; SPACE; TENSILE PROPERTIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ENERGY TRANSFER; ENTHALPY; EQUIPMENT; FABRICATION; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- 4 refs., 9 figs., 1 tab.