Published December 24, 2012
| Version v1
Journal article
Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy
Creators
- 1. School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)
- 2. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
- 3. Deparment of Physics, University of Oklahoma, Norman, Oklahoma 73019 (United States)
Description
A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, ΔEV, was determined as 2.51 ± 0.05 eV using the Pb 4p3/2 and Zn 2p3/2 core levels as a reference. The conduction-band offset, ΔEC, was, therefore, determined to be 0.59 ± 0.05 eV based on the above ΔEV value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.
Additional details
Identifiers
- DOI
- 10.1063/1.4773512;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 26
- Journal Page Range
- p. 261601-261601.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44048360
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- HETEROJUNCTIONS; LAYERS; LEAD SELENIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON SPECTROSCOPY; EPITAXY; LEAD COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2012 American Institute of Physics