Published November 2004 | Version v1
Journal article Metadata-only

The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead-Borosilicate Glass

Creators

  • 1. National University of Uzbekistan, Tashkent, 700174 (Uzbekistan)

Description

The effect of γ-ray radiation on the density of surface states at the interface between silicon and lead-borosilicate glass is studied. It is established that, at radiation doses higher than 106 rad, a local peak in the surface-state density at E = Ec - (0.32 ± 0.04) eV is observed. It is shown that the interface between Si and lead-borosilicate glass is more resistant to irradiation with γ-ray photons than is the Si-SiO2 interface obtained by thermal oxidation of the silicon surface

Additional details

Identifiers

DOI
10.1134/1.1823064;

Publishing Information

Journal Title
Semiconductors
Journal Volume
38
Journal Issue
11
Journal Page Range
p. 1304-1307
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36096805
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Translation
Descriptors DEI
BOROSILICATE GLASS; GAMMA RADIATION; INTERFACES; IRRADIATION; LEAD; PASSIVATION; RADIATION DOSES; SILICON; SILICON OXIDES; SURFACES
Descriptors DEC
CHALCOGENIDES; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTS; GLASS; IONIZING RADIATIONS; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 38, 1345-1348 (No. 11, 2004); (c) 2004 MAIK ''Nauka / Interperiodica''.