Published October 15, 2014 | Version v1
Journal article

Scaling of Efros–Shklovskii variable range hopping conduction in ZnO:Cd thin films by sol–gel

  • 1. Department of Mathematics and Physics, Anhui Jianzhu University, Hefei 230601 (China)
  • 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

Description

Electrical transport properties of sol–gel derived ZnO:Cd thin films were investigated. It was observed that for the thin films with relatively high resistivity, a crossover from the Mott variable range hopping (VRH) conduction to the Efros–Shklovskii (ES) VRH conduction was observed at low temperatures. The temperature dependent resistivity within the whole VRH conduction range from the Mott type to the ES type could be well described by a universal scaling law. The observation of ES VRH conduction in ZnO:Cd thin films suggests that the many-body electron–electron interactions should be considered for the ZnO:Cd thin films with high resistivity

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2014.06.031

Additional details

Identifiers

DOI
10.1016/j.physb.2014.06.031;
PII
S0921-4526(14)00521-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
451
Journal Page Range
p. 73-75
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.