Interaction of ultrashort x-ray pulses with B4C, SiC, and Si
- 1. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
- 2. Laboratory of Molecular Biophysics, Uppsala University, Husargatan 3, Box 596, SE-75124, Uppsala (Sweden)
Description
The interaction of 32.5 and 6 nm ultrashort x-ray pulses with the solid materials B4C, SiC, and Si is simulated with a nonlocal thermodynamic equilibrium radiation transfer code. We study the ionization dynamics as a function of depth in the material and modifications of the opacity during irradiation, and estimate the crater depth. Furthermore, we compare the estimated crater depth with experimental data, for fluences up to 2.2 J/cm2. Our results show that, at 32.5 nm irradiation, the opacity changes by less than a factor of 2 for B4C and Si and by a factor of 3 for SiC, for fluences up to 200 J/cm2. At a laser wavelength of 6 nm, the model predicts a dramatic decrease in opacity due to the weak inverse bremsstrahlung, increasing the crater depth for high fluences
Additional details
Identifiers
- DOI
- 10.1103/PhysRevE.77.026404;
- arXiv
- arXiv:0709.4473v1;
Publishing Information
- Journal Title
- Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics (Print)
- Journal Volume
- 77
- Journal Issue
- 2
- Journal Page Range
- p. 026404-026404.8
- ISSN
- 1539-3755
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39112147
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BORON CARBIDES; BREMSSTRAHLUNG; CRATERS; IONIZATION; IRRADIATION; LASERS; MODIFICATIONS; OPACITY; PULSES; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SIMULATION; THERMODYNAMICS; VELOCITY; WAVELENGTHS; X RADIATION
- Descriptors DEC
- BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CAVITIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MATERIALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2008 The American Physical Society