Published 1992
| Version v1
Book
A new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon
- 1. Microelectronics Research Center, Univ. of Texas at Austin, Austin, TX (United States)
Description
We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This paper reports that this new model is based on the dual Pearson semi-empirical implant depth profile model and the UT-MARLOWE Monte Carlo boron ion implantation model. This new model can predict with very high computational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-129-8
- Imprint Title
- Proceedings of the phase formation and modification by beam-solid interactions
- Imprint Pagination
- 913 p.
- Journal Page Range
- p. 217-222.
Conference
- Title
- Annual fall meeting of the Materials Research Society.
- Dates
- 2-6 Dec 1991.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24010295
- Subject category
- S36: MATERIALS SCIENCE; S99: GENERAL AND MISCELLANEOUS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON IONS; DOSE RATES; ION IMPLANTATION; MATHEMATICAL MODELS; MONOCRYSTALS; MONTE CARLO METHOD; SILICON; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; CRYSTALS; ELEMENTS; IONS; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-911202--.