Published 1987
| Version v1
Miscellaneous
Radiation-induced effects in silicon diode structures under different energy electron irradiation
- 1. Tashkentskij Gosudarstvennyj Univ. (USSR)
Description
Effect of electron irradiation on the spectrum of deep levels and electrophysical characteristics of silicon diode structures in the energy range from 0 to 30 MeV and dose rates from 1013 to 1016 el/cm are systematically studied
Additional details
Additional titles
- Original title (Russian)
- Радиационные эффекты в кремниевых диодных структурах при облучении электронами различных энергий
Publishing Information
- Imprint Title
- General and nuclear physics
- Journal Issue
- no. 1(37
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 82-86.
- Report number
- INIS-SU--37/A
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 19064677
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON BEAMS; ENERGY DEPENDENCE; ENERGY LEVELS; LIFETIME; MEV RANGE 10-100; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION FLUX; SILICON DIODES
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- 21 refs.; 4 figs; 1 tab. Imprint:Obshchaya i yadernaya fizika.;Nauchno-tekhnicheskij sbornik.