Published July 1, 2015
| Version v1
Journal article
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs
- 1. Instituto de Microscopía Electrónica y Materiales, Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, Puerto Real, Cádiz 11510 (Spain)
- 2. School of Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom)
- 3. GPM, Université et INSA de ROUEN, UMR CNRS 6634, BP 12, Avenue de l'université, Saint Etienne du Rouvray 76801 (France)
Description
The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by atom probe tomography. A heterogeneous distribution of Al atoms has been revealed. An Al-rich ring around the QDs has been observed. A detailed analysis of the QDs composition evidences a high degree of In/Ga intermixing, with an increasing In gradient in the growth direction. The atomic scale analyses of these nanostructures are essential to understand their functional properties
Availability note (English)
Available from http://dx.doi.org/10.1016/j.scriptamat.2015.03.013Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2015.03.013;
- PII
- S1359-6462(15)00119-0;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 103
- Journal Page Range
- p. 73-76
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47041191
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ATOMS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PROBES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TOMOGRAPHY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIAGNOSTIC TECHNIQUES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.