Published April 2009 | Version v1
Journal article

Effect of indium incorporation in Zn1-xCoxO thin films

  • 1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)
  • 2. Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

Description

In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn99.5In0.5)1-xCoxO thin films are deposited by spray pyrolysis. The substitution of Zn2+ by Co2+ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn090Co0.1O thin film (having no indium)

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2008.03.009

Additional details

Identifiers

DOI
10.1016/j.jmmm.2008.03.009;
PII
S0304-8853(08)00295-3;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
321
Journal Issue
8
Journal Page Range
p. 966-970
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.