Published 1999
| Version v1
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Total dose hardness of a commercial SiGe BiCMOS technology
Creators
- 1. Harris Semiconductor, Melbourne (United States)
Description
Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)
Availability note (English)
Available from INIS in electronic formFiles
34078063.pdf
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Additional details
Additional titles
- Original title (English)
- Reponse d'une technologie SiGe/CMOS a la dose de rayonnements ionisants
Publishing Information
- Imprint Pagination
- [2 p.]
- Report number
- INIS-FR--2069
Conference
- Title
- 5. European conference on radiation and its effects on components and systems
- Original Conference Title
- 5. congres europeen les radiations et leurs effets sur les composants et les systemes
- Dates
- 13-17 Sep 1999
- Place
- Abbaye de Fontevraud (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 34078063
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOSE RATES; GAMMA RADIATION; GERMANIUM COMPOUNDS; MOS TRANSISTORS; PERFORMANCE TESTING; RADIATION HARDENING; SILICON COMPOUNDS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; HARDENING; IONIZING RADIATIONS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS
Optional Information
- Notes
- 6 refs.