Analytical calculation of non-ionizing energy loss for elctron on semiconductor materials

The non-ionizing energy loss (NIEL) can be used to predict device degradation caused by diaplacement damage in space radiation environment. NIEL, scattering cross section, Lindhard partition factor and displacements number for electrons on Gi, Ge and GaAs, ranges from 100 key to 200 MeV, are calculated via classical NIEL model. Considering that classical NIEL model fall to give an accurate displacements number at low energy region, the displacement damage generation mechanism is refined by molecular dynamics (MD) techniques, which gives a real amount of displacements used to modify classical NIEL. And how the new displacement threshold energy in MD influences calculation results is discussed. (authors)