Published June 7, 2006
| Version v1
Journal article
Asymptotic x-ray scattering from highly mismatched epitaxial films
- 1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
- 2. Institute of Physics, Polish Academy of Sciences, aleja Lotnikow 32/46, 02-668 Warsaw (Poland)
Description
We study x-ray diffraction peak profiles from highly mismatched relaxed epitaxial films at momentum transfers exceeding the peak widths. Calculated profiles for misfit dislocations are compared with triple-crystal diffraction profiles from GaAs/Si(001) epitaxial films. We find that the longitudinal and transverse scans have a common q-4 asymptote but approach it differently, so that their profiles are qualitatively different in the experimentally available momentum range. The possible contribution from threading dislocations is estimated
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/18/5047/cm6_22_005.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/18/5047/cm6_22_005.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/18/22/005;
- PII
- S0953-8984(06)16704-1;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 18
- Journal Issue
- 22
- Journal Page Range
- p. 5047-5055
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38001395
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTALS; DISLOCATIONS; EPITAXY; FILMS; GALLIUM ARSENIDES; INTERFACES; MOMENTUM TRANSFER; SILICON; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; GALLIUM COMPOUNDS; LINE DEFECTS; PNICTIDES; SCATTERING; SEMIMETALS