Published August 12, 2013 | Version v1
Journal article

Stochastic and fractal properties of silicon and porous silicon rough surfaces

  • 1. Iranian Research Organization for Science and Technology (IROST), P. O. Box 33535-111, Tehran (Iran, Islamic Republic of)

Description

In this paper, we investigate the stochastic properties and fractal behavior of Si and porous silicon (PS) rough surfaces to characterize the complexity of their morphology. To this end, height fluctuations of these rough surfaces are determined by Atomic Force Microscopy (AFM) and then roughness and correlation length of the surfaces are calculated. The generalized Hurst exponent, h(q) and singularity spectrum, f(α) are obtained by using two dimensional MF-DFA method for both rough surfaces; Our results show that both mentioned surfaces are multifractal and have different scaling exponents. To investigate the reason of the observed multifractality behavior, we determine height distribution, skewness and kurtosis measures and show that the deviation from the Gaussian distribution for the height fluctuations of the surfaces can be a reason for the observed multifractality behavior

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/454/1/012035

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
454
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
1742-6596

Conference

Title
24. IUPAP conference on computational physics
Acronym
IUPAP-CCP 2012
Dates
14-18 Oct 2012
Place
Kobe (Japan)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44095428
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S97: MATHEMATICAL METHODS AND COMPUTING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ASYMMETRY; ATOMIC FORCE MICROSCOPY; FLUCTUATIONS; GAUSS FUNCTION; MORPHOLOGY; POROUS MATERIALS; ROUGHNESS; SCALING; SILICON; STATISTICS; STOCHASTIC PROCESSES; SURFACES; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ELEMENTS; FUNCTIONS; MATERIALS; MATHEMATICS; MICROSCOPY; SEMIMETALS; SURFACE PROPERTIES; VARIATIONS