Improved quantum efficiency and stability of GaAs photocathode using favorable illumination during activation
Creators
- 1. School of Information and Communication Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)
- 2. School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)
- 3. Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065 (China)
- 4. Engineering Research Center of New Energy Technology of Jiangxi Province, East China University of Technology, Nanchang 330013 (China)
Description
Highlights: • A favorable illumination condition during activation is verified. • Photocathode activated under monochromatic red light shows better performance. • Various illuminations during activation and recesiations show different degradations. -- Abstract: Considering that illumination using the light source is required to monitor the activation progress of negative-electron-affinity GaAs-based photocathodes, it is important to understand if and how the illumination affects the activation. To improve the photoemission performance of GaAs photocathode, epitaxial GaAs samples are Cs/O2 activated and recesiated under illumination of monochromatic light of blue (460 nm), green (532 nm), and red (633 nm) with approximately the same incident photons, and halogen tungsten lamp as white light source, respectively, to induce photoemission. The performance characteristics including quantum efficiency and photocurrent degradation among the samples treated by different illumination conditions are compared to investigate their photoemission capability and stability. The results show that GaAs photocathodes activated and recesiated under illumination of monochromatic red light, can obtain higher quantum efficiency, and better stability. This work provides a favorable illumination condition during activation for obtaining satisfactory capability of GaAs-based photocathodes, which will be propitious for applications as spin-polarized electron sources.
Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2019.04.010;
- PII
- S0304399118301748;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 202
- Journal Page Range
- p. 128-132
- ISSN
- 0304-3991
- CODEN
- ULTRD6
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55050783
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRON SOURCES; ELECTRONS; EPITAXY; GALLIUM ARSENIDES; HALOGENS; ILLUMINANCE; LIGHT BULBS; MONOCHROMATIC RADIATION; PHOTOCATHODES; PHOTOCURRENTS; PHOTOEMISSION; PHOTONS; QUANTUM EFFICIENCY; SPIN ORIENTATION; TUNGSTEN
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BOSONS; CATHODES; CRYSTAL GROWTH METHODS; CURRENTS; EFFICIENCY; ELECTRIC CURRENTS; ELECTRODES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MASSLESS PARTICLES; METALS; NONMETALS; ORIENTATION; PARTICLE SOURCES; PNICTIDES; RADIATION SOURCES; RADIATIONS; REFRACTORY METALS; SECONDARY EMISSION; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.