Published 1983 | Version v1
Report Restricted

Hole trapping, recombination, and space charge in irradiated Sandia oxides

Creators

Description

A computer model for calculating radiation effects in MOS oxides is presented. Good agreement is obtained between theory and photoconductivity experiments (photocurrent and flat band shift as a function of total dose) on Sandia radiation hard oxides. It is also shown that doses above 108 rads (delivered by a focused electron beam) are required to produce a significant number of new defect traps

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE83015212.

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Additional details

Publishing Information

Imprint Pagination
23 p.
Report number
SAND--83-0576C

Conference

Title
20. IEEE annual conference on nuclear and space radiation effects.
Dates
18-21 Jul 1983.
Place
Gatlinburg, TN (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14803019
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITORS; CARRIER MOBILITY; COMPUTER CODES; DIFFUSION; ELECTRON BEAMS; ELECTRON MICROSCOPY; PHYSICAL RADIATION EFFECTS; RADIATION HARDENING; RECOMBINATION; SILICON OXIDES; SPACE CHARGE; TRAPPING; X RADIATION
Descriptors DEC
BEAMS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ENERGY STORAGE SYSTEMS; EQUIPMENT; HARDENING; IONIZING RADIATIONS; LEPTON BEAMS; MICROSCOPY; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS

Optional Information

Secondary number(s)
CONF-830714--12.