Local epitaxy under conditions of strong growth rate anisotropy

The authors examine the gas-transport epitaxy of indium and gallium arsenide which is characterized by a strong anisotropy of growth rates; it can be effectively used for selective epitaxy and planar filling of substrate holes by the deposited material. Under these conditions selective growth as been effected on (lll) A substrates, where holes are filled by growth of the side walls, and the normal growth stage is suppressed. Planar selective structures can be grown in holes formed by isotropic etching. No preliminary faceting of the lateral surfaces by fast-growing planes is required. The possibility is established of effecting selective epitaxial deposition with total suppression of growth after the holes have been filled, as well as selective epitaxy on substrates without protective masks