Cross section measurement of 11B(p,α) 8Be and its application on boron characterization

Existing problems in the published cross section data of the 11B(p,α) 8Be reaction and the consequences in material analysis will be reviewed. The existing cross section data on this reaction shows errors of up to 30% and inconsistency as high as 50%. New experimental data of the cross sections with the standard deviation better than 3% are presented. Application of NRA/Channeling for both the chemical concentration profiles and the carrier profiles of B implanted into silicon will be introduced. We used NRA/Channeling combined with anodic stripping to get the chemical and carrier depth profiles simultaneously. 11B(p,α) 8Be reaction at incident beam energy of 660 keV was used to probe 11B atoms. Channeling technique was applied to measure the lattice location of the 11B atoms. Anodic oxidation stripping was used to get differential depth information. This technique can deliver consistent and reliable chemical depth profiles of 11B as well as the carrier depth profiles. The differential NRA/Channeling technique is essential in studies of ion implantation, TED, activation and deactivation, and defect engineering application in ultra-shallow junction research