Published April 28, 2014 | Version v1
Journal article Metadata-only

Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

Creators

  • 1. Department of Photonics, National Sun-Yat-Sen University, Kaohsiung 80400, Taiwan (China)
  • 2. Department of Electrical Engineering, Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30010, Taiwan (China)
  • 3. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
  • 4. Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan (China)
  • 5. Department of Physics, National Tsing Hwa University, Hsinchu 30010, Taiwan (China)

Description

Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations

Additional details

Identifiers

DOI
10.1063/1.4875027;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
17
Journal Page Range
p. 172105-172105.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45088957
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; RELAXATION TIME
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; PNICTIDES

Optional Information

Notes
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