Influences of ion migration and electric field on the layered anodic films on Al-Mg alloys

Anodizing of sputtering-deposited Al-Mg alloys containing 27 and 32 at.% magnesium in sodium hydroxide electrolyte is shown to develop two-layered anodic oxide films. The outer layer contains aluminium and magnesium species, and is enriched in the latter species relative to the alloy, particularly towards the film surface. The inner layer also contains the two alloy species but is depleted in magnesium, due to Mg²⁺ ions migrating to the outer layer faster than Al³⁺ ions. The ratio of the thickness of the outer layer to that of the film increases with increase of magnesium content of the alloy. The presence of aluminium species in the outer layer is attributed to the penetration of the outer layer by oxide of the inner layer with lower ionic resistance. This mechanism of film growth appears to be sustainable to alloy concentrations to 40 at.%Mg, when the inner layer may no longer form. Enrichment of alloying elements can accompany film growth on Al-Mg alloys, as shown by enrichment of tungsten to 2-3 x 10¹⁵ atoms cm^-2 in an Al-26 at.%Mg-1 at.%W alloy