Tunneling Current Calculation on Anisotropic Si/Si1-x Gex/Si Heterojunction Bipolar Transistor Using Transfer Matrix Method

Tunneling current calculation on heterojunction bipolar transistor of anisotropic Si/Si1-x Gex/Si using transfer matrix method is done to test tunneling current calculation results analytical. Coupling between transversal and longitudinal components of electron motion are involved in calculation. Calculation was applied at hetero structure Si(110)/Si0.5Ge0.5/Si(110). The result shows that transfer matrix method calculation is equal to analytical calculation for all barrier thickness and electron velocity variation. The coupling between kinetic energies in parallel and perpendicular to Si1-x Gex barrier surface affects tunneling current significantly when electron velocity is faster than I x 105 m/s. (author)