Published June 1995
| Version v1
Journal article
About the utilization of hydrostatic pressure and uniaxial stress in the physics of semiconductors
Creators
- 1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Valbonne (France)
- 2. Montpellier-2 Univ., 34 (France). Groupe d'Etudes des Semiconducteurs
Description
We review the influence of hydrostatic pressure and uniaxial stress on the electronic structure of bulk semiconductors, bound excitons and semiconductor heterostructures. We illustrate the potentialities of such perturbations to give symmetries of quantum states as well as band offsets in heterostructures. (orig.)
Additional details
Publishing Information
- Journal Title
- Annales de Physique (Paris)
- Journal Volume
- 20
- Journal Issue
- 3
- Journal Page Range
- p. 109-117.
- ISSN
- 0003-4169
- CODEN
- ANPHAJ
Conference
- Title
- Claude Benoit a la Guillaume - radiative effects in semiconductors.
- Original Conference Title
- Symposium: Claude Benoit a la Guillaume - Effets Radiatifs dans les Semiconducteurs
- Acronym
- Symposium
- Dates
- 6-7 Apr 1995.
- Place
- Paris (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 27047158
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONIC STRUCTURE; EXCITONS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; NITROGEN ADDITIONS; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE; REFLECTIVITY; SULFUR ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES