Published December 15, 2009
| Version v1
Journal article
Minority-carrier-enhanced dissociation of the boron-hydrogen pair in silicon
Creators
- 1. Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Moscow Region (Russian Federation)
Description
The depth profiles of the boron-hydrogen pairs and their variations due to thermal treatments in the dark and under photoexcitation are studied in the p-type silicon crystal. The presence of minority carriers is observed to increase the dissociation rate of the BH pairs by two orders of magnitude at 310 K. The effect is attributed to recharging of the partially dissociated hydrogen atoms.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.158Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.158;
- PII
- S0921-4526(09)00873-4;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5093-5095
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089742
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON COMPLEXES; CARBON NITRIDES; CARRIERS; CRYSTAL DEFECTS; DISSOCIATION; HYDROGEN COMPLEXES; P-TYPE CONDUCTORS; SILICON
- Descriptors DEC
- CARBON COMPOUNDS; COMPLEXES; CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.