Published 1991
| Version v1
Book
X-ray diffraction study of heteroepitaxy of MOCVD grown TiO2 and VO2 films on sapphire single crystals
Creators
- 1. Material Science Div., Argonne National Lab., Argonne, IL (United States)
Description
This paper reports on a four diffractometry technique that is used to determine the heteroepitaxial relations of VO2 and TiO2 thin films grown by an MOCVD technique on sapphire (0001) and (1120) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-115-8
- Imprint Title
- Heteroepitaxy of dissimilar materials
- Imprint Pagination
- 504 p.
- Journal Page Range
- p. 181-186.
Conference
- Title
- Spring meeting of the Materials Research Society (MRS).
- Dates
- 29 Apr - 3 May 1991.
- Place
- Anaheim, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23057513
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; EPITAXY; MONOCRYSTALS; SAPPHIRE; SUBSTRATES; SYMMETRY; THIN FILMS; TITANIUM OXIDES; VANADIUM OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTALS; DEPOSITION; DIFFRACTION; FILMS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-910406--.