Published December 15, 2007 | Version v1
Journal article

Luminescence properties of defects in ZnO

  • 1. Physics Department, Virginia Commonwealth University, Richmond, VA 23284 (United States)
  • 2. Electrical Engineering Department, Virginia Commonwealth University, Richmond, VA 23284 (United States)
  • 3. Cermet, Inc., Atlanta, GA (United States)
  • 4. SVT Associates, Inc., Eden Prairie, MN (United States)

Description

We briefly review the luminescence properties of defects in ZnO responsible for broad bands in the visible part of the photoluminescence (PL) spectrum. Bulk and thin-film ZnO samples produced by several companies and research groups were studied at different temperatures and excitation intensities. Steady-state and time-resolved PL was analyzed. We resolved and classified about 10 PL bands having maxima from 1.75 to 2.6 eV at 10 K. Types of transitions and possible assignments of the PL bands are briefly discussed

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2007.08.187

Additional details

Identifiers

DOI
10.1016/j.physb.2007.08.187;
PII
S0921-4526(07)00732-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
401-402
Journal Page Range
p. 358-361
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
24. International conference on defects in semiconductors
Dates
22-27 Jul 2007
Place
Albuquerque, NM (United States)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.