Published May 1992
| Version v1
Journal article
Ion beam synthesis of epitaxial CoSi2 layers and the redistribution of dopants within them
- 1. Dept. Electronic and Electrical Engineering, Univ. of Surrey, Guildford (United Kingdom)
Description
The move within the semiconductor industry towards ultra-large-scale integration (ULSI) has prompted the evolution of new technologies. Ion beam synthesis (IBS) is one such technology in which high doses of energetic ions are used to form compound layers within a target substrate. This paper studies the evolution of IBS structures produced by high dose cobalt implantation, during both implantation and annealing. It also examines the redistribution of dopants in the as implanted and annealed CoSi2 structures. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 68
- Journal Issue
- 1-4
- Journal Page Range
- p. 369-379.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 2. European conference on accelerators in applied research and technology (ECAART-2).
- Dates
- 3-7 Sep 1991.
- Place
- Frankfurt am Main (Germany).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 24004524
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; COBALT IONS; COBALT SILICIDES; DOPED MATERIALS; ION BEAMS; ION IMPLANTATION; SILICON; SYNTHESIS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; COBALT COMPOUNDS; ELEMENTS; HEAT TREATMENTS; IONS; MATERIALS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS