In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity
- 1. Key Laboratory of Microelectronics Devicess and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Description
In this paper, an N-doped titanium oxide (TiO2) photocatalyst is deposited by a plasma-enhanced atomic layer deposition (PEALD) system through the in-situ doping method. X-ray photoelectron spectroscopy (XPS) analysis indicates that substitutional nitrogen atoms (∼395.9 eV) with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425–550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process
Availability note (English)
Available from http://dx.doi.org/10.1088/1009-0630/16/3/12Additional details
Identifiers
Publishing Information
- Journal Title
- Plasma Science and Technology
- Journal Volume
- 16
- Journal Issue
- 3
- Journal Page Range
- p. 239-243
- ISSN
- 1009-0630
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46058732
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ATOMS; DOPED MATERIALS; EV RANGE; FILMS; NITROGEN; PHOTOCATALYSIS; PLASMA; TITANIUM OXIDES; VISIBLE RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CATALYSIS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS