Published March 2014 | Version v1
Journal article

In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

  • 1. Key Laboratory of Microelectronics Devicess and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

In this paper, an N-doped titanium oxide (TiO2) photocatalyst is deposited by a plasma-enhanced atomic layer deposition (PEALD) system through the in-situ doping method. X-ray photoelectron spectroscopy (XPS) analysis indicates that substitutional nitrogen atoms (∼395.9 eV) with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425–550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process

Availability note (English)

Available from http://dx.doi.org/10.1088/1009-0630/16/3/12

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Science and Technology
Journal Volume
16
Journal Issue
3
Journal Page Range
p. 239-243
ISSN
1009-0630