The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga₂O₃ films on GaAs substrate

We have fabricated the europium (Eu) doped Ga₂O₃ thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga₂O₃ films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga₂O₃ structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga₂O₃ films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga₂O₃ as the host materials for Eu³⁺ ions.