Published July 2012 | Version v1
Journal article

Structure refinement for tantalum nitrides nanocrystals with various morphologies

  • 1. School of Science, Beijing Jiaotong University, 3 Shang Yuan Cun, Haidian District, Beijing 100044 (China)
  • 2. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 Xue Yuan Road, Haidian District, Beijing 100083 (China)

Description

Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN0.83 and TaN0.5 nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m2 g−1. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaNx) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN0.83 and TaN0.5 nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m2 g−1, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2012.03.050

Additional details

Identifiers

DOI
10.1016/j.materresbull.2012.03.050;
PII
S0025-5408(12)00177-8;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
47
Journal Issue
7
Journal Page Range
p. 1630-1635
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.