Investigation of photocurrent efficiency of ZnO/CdTe based Inorganic thin film solar cell
- 1. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur (India)
- 2. Department of Physics, Sarguja University, Ambikapur (India)
- 3. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Taiwan (China)
Description
ZnO/CdTe based inorganic thin film solar cell was successfully fabricated. The efficiency of ITO/ZnO/CdTe/MoO3/Al inorganic solar cell has been investigated. Open circuit voltage, short circuit current, fill factor and power conversion efficiency were calculated using current density-voltage characteristics. The SEM and AFM image indicate the good crystallinity and less roughness of the thin films, overall the quality of thin films are good. The effect of ZnO thickness varying from 50 nm to 150 nm was investigated and maximum efficiency of about 8.39 % was observed for the 100 nm thickness of ZnO layer. Initially as we increase the thickness of ZnO layer i.e. thicker the active layer, the more the excitons induced by light absorption. This increases the efficiency of solar cell. The thickness of ZnO ranging from 75-100 nm also support for perfect antireflection coating which increases the absorption of light. However, more increment in the ZnO thickness causes the build-in electric field weaker and the pathway becomes longer for transporting the opposite charge carriers derived from exiciton separation to their corresponding electrodes at the same time, which makes the probability of charges collection by respective electrodes lower. (author)
Additional details
Publishing Information
- Publisher
- CSIR-National Physical Laboratory
- Imprint Place
- New Delhi (India)
- Imprint Title
- Proceedings of the seventeenth international conference on thin films: abstracts
- Imprint Pagination
- 236 p.
- Journal Page Range
- p. 78
Conference
- Title
- 17. international conference on thin films
- Acronym
- ICTF-2017
- Dates
- 13-17 Nov 2017
- Place
- New Delhi (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52048004
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTALLIZATION; CURRENT DENSITY; DEPOSITION; EXCITONS; SUBSTRATES; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; FILMS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; QUASI PARTICLES; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS