Published February 26, 1990
| Version v1
Journal article
Buffer layers of cubic zirconium dioxide on silicon substrates
Creators
- 1. Minskij Radiotekhnicheskij Inst., Minsk (Byelorussian SSR)
Description
The structure of thin ZrO2 films synthesized on silicon substrates to create a buffer layer for further deposition of high-temperature superconductor films, is investigated. It is ascertained that Y+3 addition facilitates the formation of zirconium dioxide cubic modification with the degree of film texturing exceeding 95%. The films obtained are resistant to high temperatures (up to 1000 deg C) and stable in time
Additional details
Additional titles
- Original title (Russian)
- Буферные слои кубического диоксида циркония на кремниевых подложках
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 16
- Journal Issue
- 4
- Series
- Pis'ma Zh. Tekh. Fiz.
- Journal Page Range
- 19-23
- ISSN
- 0320-0116
- CODEN
- PZTFD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 23000858
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COATINGS; CUBIC LATTICES; LATTICE PARAMETERS; OXIDATION; SILICON; SUBSTRATES; TEXTURE; THIN FILMS; TYPE-II SUPERCONDUCTORS; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; FILMS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS