Published July 1992
| Version v1
Journal article
Silicon detectors of ionizing radiations with implanted PN junction
Creators
- 1. Slovenska Akademia Vied, Bratislava (Czechoslovakia). Elektrotechnicky Ustav
- 2. Slovenska Akademia Vied, Piestany (Czechoslovakia). Ustav Fyzikalnej Elektroniky
Description
The preparation and properties of silicon detectors of ionizing radiation with an implanted PN junction at the input are described. The detectors were prepared by planar technology. In a batch process, 55 pieces of detectors with outside dimensions of 8x8 mm and an active area of 5x5 mm could be prepared by this technology on one Si plate. The energy resolution (FWHM) of the prepared detectors is in the range of 16.1 - 20.6 keV for α-particles of 238Pu (5499.21 keV). (author) 4 figs., 18 refs
Additional details
Additional titles
- Original title (Slovak)
- Kremikove detektory ionizujuceho ziarenia s implantovanym priechodom PN
Publishing Information
- Journal Title
- Jaderna Energie
- Journal Volume
- 38
- Journal Issue
- 7
- Journal Page Range
- p. 250-253.
- ISSN
- 0448-116X
- CODEN
- JADEAQ
INIS
- Country of Publication
- Czech Republic
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 24016154
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ENERGY RESOLUTION; ION IMPLANTATION; P-N JUNCTIONS; PASSIVATION; PERFORMANCE TESTING; SI SEMICONDUCTOR DETECTORS; SILICON OXIDES; SPECIFICATIONS
- Descriptors DEC
- CHALCOGENIDES; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; TESTING
Optional Information
- Notes
- English translation available from Nuclear Information Center, 156 16 Prague-Zbraslav, Czechoslovakia, at USD 10.- per typewritten page.