Defect dynamics in P+ implanted 6H-SiC studied by positron annihilation spectroscopy

We study P+-implanted 6H-SiC samples by means of a variable energy slow positron beam. In as-grown samples we observe a slow fall of the annihilation S-parameter from the surface to the bulk value, indicating a long diffusion length, i.e. absence of positron-trapping defects. This result is also confirmed by positron-lifetime measurements yielding essentially a single-component lifetime of 148 ps. In the implanted samples we detect a wide flat region of slightly risen defectiveness. However, we note that, in order to reproduce reasonably well the depth of the damaged layer, one has to assume the presence of strong electric fields in the implanted region. With annealing, S-curves show a rising maximum, moving towards surface - probably, in as-implanted samples the defects are decorated by P+ ions and do not trap positrons in effective way. After the highest temperature annealing a highly defected region extends for the first 50 nm depth. We perform also atomic force microscopy to monitor the evolution of the surface defects. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)