Published January 1982
| Version v1
Journal article
Annealing behaviour of aluminium implanted germanium
Description
The annealing behaviour of aluminium implanted germanium has been investigated in the temperature range 775-5250C. The aluminium concentration profiles were determined using the (p,γ) resonance broadening method. The values of 2.2 eV for the activation energy and 9.8 x 10-4 cm2/s for the frequency factor for the Al diffusion in germanium are deduced. Fast outdiffusion is observed even at low temperatures. Surface enrichment and oxidation effects are discussed. (author)
Additional details
Publishing Information
- Journal Title
- Solid-State Electron.
- Journal Volume
- 25
- Journal Issue
- 1
- Series
- Solid-State Electron.
- Journal Page Range
- 49-54
- ISSN
- 0038-1101
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13670132
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM IONS; ALUMINIUM 27 TARGET; ANNEALING; DEPTH; DIFFUSION; EXPERIMENTAL DATA; GERMANIUM; HIGH TEMPERATURE; ION IMPLANTATION; LINE BROADENING; OXIDATION; PROTON REACTIONS; SPATIAL DISTRIBUTION; SURFACES; TEMPERATURE DEPENDENCE; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; BARYON REACTIONS; CHARGED PARTICLES; CHEMICAL REACTIONS; DATA; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY; HADRON REACTIONS; HEAT TREATMENTS; INFORMATION; IONS; METALS; NUCLEAR REACTIONS; NUCLEON REACTIONS; NUMERICAL DATA; TARGETS