Published December 1, 2014
| Version v1
Journal article
Phase-amplitude coupling characteristics in directly modulated quantum dot lasers
Creators
- 1. Institut National des Sciences Appliquées, Université Européenne de Bretagne, 35708 Rennes Cedex 7 (France)
- 2. Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 75634 Paris Cedex 13 (France)
- 3. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106-4343 (United States)
Description
We present a semi-analytical model for studying the phase-amplitude coupling (α-factor) in quantum dot (QD) semiconductor lasers, which takes into account the influence of carrier populations in the excited state and in the two-dimensional carrier reservoir on the refractive index change. Calculations of the α-factor based on the amplified spontaneous emission method and on the "FM/AM" technique are both investigated. It is shown that the α-factor of a QD laser strongly depends on the energy separation between the ground state and the off-resonant states. Through band structure engineering, the α-factor can be reduced by enlarging this energy separation
Additional details
Identifiers
- DOI
- 10.1063/1.4903493;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 22
- Journal Page Range
- p. 221114-221114.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46108145
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- EXCITED STATES; GROUND STATES; QUANTUM DOTS; REFRACTIVE INDEX; SEMICONDUCTOR LASERS
- Descriptors DEC
- ENERGY LEVELS; LASERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC