Published December 1, 2014 | Version v1
Journal article

Phase-amplitude coupling characteristics in directly modulated quantum dot lasers

  • 1. Institut National des Sciences Appliquées, Université Européenne de Bretagne, 35708 Rennes Cedex 7 (France)
  • 2. Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 75634 Paris Cedex 13 (France)
  • 3. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106-4343 (United States)

Description

We present a semi-analytical model for studying the phase-amplitude coupling (α-factor) in quantum dot (QD) semiconductor lasers, which takes into account the influence of carrier populations in the excited state and in the two-dimensional carrier reservoir on the refractive index change. Calculations of the α-factor based on the amplified spontaneous emission method and on the "FM/AM" technique are both investigated. It is shown that the α-factor of a QD laser strongly depends on the energy separation between the ground state and the off-resonant states. Through band structure engineering, the α-factor can be reduced by enlarging this energy separation

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
22
Journal Page Range
p. 221114-221114.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46108145
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
EXCITED STATES; GROUND STATES; QUANTUM DOTS; REFRACTIVE INDEX; SEMICONDUCTOR LASERS
Descriptors DEC
ENERGY LEVELS; LASERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
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