Roughness and correlations in the transition from island to film growth: Simulations and application to CdTe deposition
- 1. Instituto de Física, Universidade Federal Fluminense, Avenida Litorânea s/n, Niterói, RJ 24210-340 (Brazil)
- 2. Departamento de Física, Universidade Federal de Viçosa, Viçosa 36570-900, MG (Brazil)
Description
Highlights: • Simulations of deposition during island growth, coalescence, and film formation. • Island density is controlled by diffusion on the substrate. • Morphology in island coalescence and film formation is controlled by ES barrier. • Maximal roughness of CdTe films as islands coalesce indicates negligible barriers. Using kinetic Monte Carlo simulations, we relate morphological properties and microscopic dynamics during island growth, coalescence, and initial formation of continuous heteroepitaxial films. The average island width is controlled by adatom mobility on substrate. Subsequent evolution strongly depends on the Ehrlich-Schwöebel energy barrier of the deposited material. As decreases, islands become taller and their coalescence is delayed. For small islands and large , the global roughness increases as and the local roughness increases at short scales (apparent anomalous scaling) before and after island coalescence. If the islands are wide, W may have a plateau for large and has a maximum for small when the islands coalesce. This framework is applied to atomic-force microscopy data of the initial stages of CdTe deposition on Kapton: a maximum of W during island coalescence indicates negligible ES barrier, consistently with scaling properties of much thicker films, and the diffusion coefficient on the Kapton surface at is estimated. Applications of the framework to other materials are suggested, in which the expected roles of ES barriers are highlighted.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.149946Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.149946;
- PII
- S0169433221010229;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 560
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54080235
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CADMIUM TELLURIDES; COALESCENCE; CRYSTAL GROWTH; DEPOSITION; DEPOSITS; ISLANDS; MONTE CARLO METHOD; ROUGHNESS; SIMULATION; THIN FILMS
- Descriptors DEC
- CADMIUM COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; FILMS; MICROSCOPY; SURFACE PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.