Published October 1, 2005
| Version v1
Journal article
White beam Laue topography using a scintillator-CCD combination
- 1. Department of Materials Science and Engineering, POSTECH, Pohang 790-784 (Korea, Republic of)
- 2. Ioffe physico-Technical Institute, RAS, St.Petersburg (Russian Federation)
- 3. Institute of Physics, Nankang, Taipei, Taiwan (China)
Description
Using a scintillator-CCD imaging system, we successfully conducted a synchrotron white beam Laue topography (WBLT) experiment. It is demonstrated that this approach is able to provide a high-resolution microtopograph of p/p+ Si (1 0 0). Optimum condition for high-resolution imaging is obtainable from the incident angle dependence of geometrical resolution. Black and white dislocation contrast suggests the potential of WBLT in characterizing dislocation structure
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2005.07.049;
- PII
- S0168-9002(05)01491-9;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 551
- Journal Issue
- 1
- Journal Page Range
- p. 152-156
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- Symposium D, applications of linear and area detectors for X-ray and neutron diffraction and spectroscopy
- Acronym
- E-MRS fall meeting 2004
- Dates
- 6-10 Sep 2004
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37044961
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAMS; CHARGE-COUPLED DEVICES; DISLOCATIONS; PHOSPHORS; RESOLUTION; SYNCHROTRONS; TOPOGRAPHY; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ACCELERATORS; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CYCLIC ACCELERATORS; DIFFRACTION; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; LINE DEFECTS; RADIATIONS; SCATTERING; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.