Published 1974
| Version v1
Report
Restricted
TSC measurements on boron implanted silicon junctions
Creators
- 1. Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. de Physique des Rayonnements et d'Electronique Nucleaire
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 12 p.
- Report number
- AED-Conf--74-328-001
Conference
- Title
- International conference on lattice defects in semiconductors.
- Dates
- 22 Jul 1974.
- Place
- Freiburg im Breisgau, F.R. Germany.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 6169755
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRIC CURRENTS; ION IMPLANTATION; KEV RANGE; N-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SILICON; SOLIDS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; CURRENTS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- 6 figs.; with refs. With abstract.