Published December 2008 | Version v1
Journal article Metadata-only

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

Creators

  • 1. The State Key Laboratory of Functional Materials for Informations Shanghai Inst. of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai (China)

Description

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect. (authors)

Additional details

Publishing Information

Journal Title
Chinese Physics. C, High Energy Physics and Nuclear Physics
Journal Volume
32
Journal Issue
12
Journal Page Range
p. 989-991
ISSN
1674-1137

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
40095410
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
DIELECTRIC MATERIALS; HARDENING; MODIFICATIONS; MOSFET; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RELIABILITY; SEMICONDUCTOR MATERIALS; SILICON; SOLUTIONS
Descriptors DEC
DISPERSIONS; DOSES; ELEMENTS; FIELD EFFECT TRANSISTORS; HOMOGENEOUS MIXTURES; MATERIALS; MIXTURES; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS

Optional Information

Notes
5 figs., 9 refs.