Published 2000
| Version v1
Miscellaneous
Reduction of oval crystal defects density on the layer surface of III-V compounds manufacturing by means of MBE method
- 1. Instytut Technologii Elektronowej, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Original title (Polish)
- Redukcja gestosci defektow owalnych na powierzchni warstw zwiazkow III-V wytwarzanych technika MBE
Publishing Information
- Imprint Title
- Abstracts book of 7. Scientific Conference 'Electronic Technology' ELTE 2000
- Imprint Pagination
- [RP 1-9; RS 1; ME 1-78; MN 1-58; F 1-73; TP 1-48; MG 1-16; MS 1-51]
- Journal Page Range
- p. ME, 39
Conference
- Title
- 7. Scientific Conference 'Electronic Technology' ELTE 2000
- Original Conference Title
- 7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000
- Dates
- 18-22 Sep 2000
- Place
- Polanica-Zdroj (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 32031640
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARSENIDES; BOUNDARY LAYERS; CRYSTAL DEFECTS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; MANUFACTURING; MOLECULAR BEAM EPITAXY; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; FILMS; GALLIUM COMPOUNDS; LAYERS; PNICTIDES
Optional Information
- Notes
- Imprint:Zbior streszczen 7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000