Investigation of morphological and electrical characteristics of tin doped indium oxide layers produced by a quasi single source precursor system

Sol–gel coatings of tin doped indium oxide (ITO) were prepared via spin-coating, using a quasi single source precursor system that enhances homogeneous distribution of the dopant tin inside the oxide lattice. In addition, the implementation of metastable, bivalent tin into the gel layer enables the application of a one-step heat treatment under inert atmosphere, eliminating the need for the usually required critical post reduction treatment after crystallisation. The ITO layers produced were uniformly polycrystalline with a homogeneous thickness of 60 nm. They showed increased electrical conductivity and optical performance in terms of transmission (vis) and IR reflection. The texture was less pronounced and the tensile residual stress determined in the layers was lower than in similar films, manufactured in a conventional two-step annealing process. - Highlights: ► A quasi single source precursor system enables one-step heat treatment of layers. ► Thereby less pronounced texture and lower tensile residual stress were obtained. ► The layers show hardly any fluctuations in the thickness. ► The electrical conductivity could be increased. ► Optical performance in terms of transmission (vis) and IR reflection was increased.