Published December 19, 2014 | Version v1
Journal article

Superlattice of FexGe1−x nanodots and nanolayers for spintronics application

  • 1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA, 90095 (United States)
  • 2. Institute of Materials Science and Engineering, National Central University, Taiwan (China)
  • 3. State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)
  • 4. Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)

Description

FexGe1−x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1−x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1−x nanodots, while showing the absence of superparamagnetism in FexGe1−x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1−x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1−x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/25/50/505702

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
25
Journal Issue
50
Journal Page Range
[7 p.]
ISSN
0957-4484