Superlattice of FexGe1−x nanodots and nanolayers for spintronics application
Creators
- 1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA, 90095 (United States)
- 2. Institute of Materials Science and Engineering, National Central University, Taiwan (China)
- 3. State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)
- 4. Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)
Description
FexGe1−x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1−x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1−x nanodots, while showing the absence of superparamagnetism in FexGe1−x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1−x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1−x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/25/50/505702Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 25
- Journal Issue
- 50
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47040898
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- EQUIPMENT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PRECIPITATION; QUANTUM DOTS; SCATTERING; SUPERLATTICES; SUPERPARAMAGNETISM; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EPITAXY; MAGNETISM; MICROSCOPY; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEPARATION PROCESSES