Published March 1, 2017 | Version v1
Journal article Metadata-only

Tools for modeling radioactive contaminants in chip materials

Creators

  • 1. Université de Montpellier, UMR-CNRS 5214, 860 rue de Saint Priest, F-34095 Montpellier (France)
  • 2. Vanderbilt University, Nashville, TN 37235 (United States)
  • 3. Laboratoire souterrain de Modane (LSM), UMR F-6417 (France)
  • 4. ICP-MS Laboratory of Géosciences Montpellier, Université de Montpellier (France)

Description

Radioactive pollutants are naturally present in microelectronic device materials and can be an issue for the reliability of devices. The main concern is alpha emitters that produce high-energy particles (a few MeV) that ionize the semiconductor and then trigger soft errors. The question is to know what kinds of radionuclides are present in the device, their location in the device and the abundance of each species. In this paper we describe tools that are required to address the issue of radioactive pollutants in electronic devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/aa5479

Additional details

Identifiers

DOI
10.1088/1361-6641/aa5479;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
32
Journal Issue
3
Journal Page Range
[8 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49087602
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABUNDANCE; ALPHA SOURCES; ELECTRONIC EQUIPMENT; ERRORS; MEV RANGE 01-10; MICROELECTRONICS; RADIOACTIVE WASTES; RADIOISOTOPES; SEMICONDUCTOR MATERIALS; SIMULATION; TOOLS
Descriptors DEC
ENERGY RANGE; EQUIPMENT; ION SOURCES; ISOTOPES; MATERIALS; MEV RANGE; PARTICLE SOURCES; RADIATION SOURCES; RADIOACTIVE MATERIALS; WASTES