Influence of a magnetic field on the effects of hot electrons in n-type InSb
Description
Experimental results are presented related to studying the impact of a magnetic field on the Hahn effect and shock ionization in n-InSb at a temperature of liquid nitrogen. Dependence of the effects on the sample geometry in transverse magnetic fields are discussed. Based on the measurement of volt-ampere characteristics of n-InSb samples it has been found that the dependence of the threshold voltage on length has a minimum, and in strong magnetic fields the threshold voltage shows an increase. The volt-ampere characteristics in a longitudinal magnetic field reveal that the threshold field of the Hahn effect is little dependent on the magnetic field. Measurement of the electron-hole pair generation rate, which represents the most significant quantitative characteristic of shock ionization, shows that in a magnetic field perpendicular to current the measurement results depend heavily on the sample geometry
Additional details
Additional titles
- Original title (Russian)
- Влияние магнитного поля на эффекты горячих электронов в н-InSb
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 11
- Journal Issue
- 3
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 563-567
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9368766
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GEOMETRY; HALL EFFECT; HOLES; INDIUM COMPOUNDS; IONIZATION; MAGNETIC FIELDS; N-TYPE CONDUCTORS; PAIR PRODUCTION; PULSES
- Descriptors DEC
- ELECTRICAL PROPERTIES; INTERACTIONS; MATHEMATICS; MOBILITY; PARTICLE INTERACTIONS; PARTICLE MOBILITY; PARTICLE PRODUCTION; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- For English translation see the journal Sov. Phys. -Semicond.