Published April 1987 | Version v1
Journal article

Electron capture by the real surface of germanium under low-temperature irradiation conditions

  • 1. V. I. Lenin Belorussian State Univ., Minsk (Byelorussian SSR)

Description

The appearance of surface conductance in p-type germanium samples irradiated at 77 K with 60Co rays due to a strong surface band bending was reported in Ref. 1. Charging of the surface as a result of irradiation may be due to formation of new surface electron states as a result of adsorption-desorption processes on the surfaces of germanium samples immersed in liquid nitrogen and subjected to irradiation with gamma rays or due to formation of ultraslow surface electron states typical of germanium coated by an natural oxide film. The contributions of these two processes were estimated by ultraviolet irradiation of p-type germanium samples immersed in liquid nitrogen

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
21
Journal Issue
4
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
460-461
ISSN
0038-5700
CODEN
SPSEA

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).