Published February 1974
| Version v1
Journal article
Encapsulation of high-purity germanium detectors
Description
The encapsulation of high purity germanium detectors is very desirable in order to increase their versatility and reliability. However, rapid and extensive degradation is seen for all detectors made from detector grade crystals which are encapsulated in a simple vacuum. Extensive studies have shown that the cause of this degradation is hydrogen adsorption on the detector surface. There it causes the formation of a strong p+ inversion layer which in turn shunts the detector junction. Reliable encapsulation is shown to be achievable by the use of hydrogen-free germanium crystals.
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 21
- Journal Issue
- 1
- Series
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci.
- Journal Page Range
- 344-346
- ISSN
- 0018-9499
Conference
- Title
- 20. nuclear science symposium and 5. nuclear power systems symposium.
- Dates
- 14 Nov 1973.
- Place
- San Francisco, CA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 5144179
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; FABRICATION; GE SEMICONDUCTOR DETECTORS; HYDROGEN; SURFACES
- Descriptors DEC
- ELEMENTS; MEASURING INSTRUMENTS; NONMETALS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent