Published August 2018 | Version v1
Journal article

Influence of surface chemistry and point defects in TiN based electrodes on electrochemical capacitive storage activity

  • 1. University of Namur, Research Centre in Physics of Matter and Radiation (PMR), LISE Laboratory, B-5000 Namur (Belgium)
  • 2. Center of Excellence for Research in Engineering Materials, Deanship of Scientific Research, King Saud University, P.O. Box 800, Riyadh 11421 (Saudi Arabia)
  • 3. University of Rennes 1, Institut d'Electronique et de Télécommunications, IETR − UMR CNRS 6164, Campus de Beaulieu −Bat 11D 263 Av General Leclerc, 35042 Rennes cedex (France)
  • 4. Reseau sur le Stockage Electrochimique de l'Energie (RS2E), FR CNRS, 3459 (France)
  • 5. Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP32229, 44322 Nantes Cedex 3 (France)

Description

The effect of surface chemistry of reactive sputtered TiN electrodes in the electrochemical capacitors (ECs) was investigated. The TiN films were produced on vertically aligned carbon nanotubes. X-ray photoelectron spectroscopy analysis revealed surface defects generation with no effect on morphology. Cyclic voltammetry experiments were performed in aqueous 0.5 M K2SO4 solution and 1 M Et4NBF4 ((tetraethylammonium tetrafluoroborate)) organic electrolyte. The presence of oxygen vacancies and Ti interstitials on the top surface layer lead to enhanced electrochemical capacitive charge storage. Such findings open the way to design nitride films with optimized surface chemistry for use in the ECs.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2018.04.051

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2018.04.051;
PII
S1359646218302781;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
153
Journal Page Range
p. 59-62
ISSN
1359-6462
CODEN
SCMAF7

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.